Stacking-induced 1H MoS2 bilayers achieve a direct band gap, enhancing optoelectronic potential with intensified excitonic emission and stronger valley polarization.
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Rhombohedral graphene on WSe2 exhibits both zero-resistance superconducting and finite-resistance anomalous metal phases within the same system, revealing complex electronic behavior.
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Wafer-scale monolayer boron carbon nitride achieves high-mobility p-type conduction with 100 cm²/V·s in 2D FETs, surpassing existing p-type semiconductors.
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