Stacking-induced direct band gap in CVD-grown 1H MoS(2) bilayers.
Stacking-induced 1H MoS2 bilayers achieve a direct band gap, enhancing optoelectronic potential with intensified excitonic emission and stronger valley polarization.
- Why it matters: Transition metal dichalcogenide bilayers typically have an indirect band gap, limiting their light emission capabilities and hindering integration into optoelectronic devices.
- What they did: A two-step chemical vapor deposition process produced atomically precise 1H-stacked MoS2 bilayers, confirmed by spectroscopy and theoretical calculations to have a direct band gap.
- The result: This advancement enables improved valleytronic and optoelectronic applications by providing a model system with enhanced light emission and valley polarization properties.