Wafer-scale epitaxy growth of high-mobility p-type boron carbon nitride.

Wafer-scale monolayer boron carbon nitride achieves high-mobility p-type conduction with 100 cm²/V·s in 2D FETs, surpassing existing p-type semiconductors.

• Why it matters: Developing stable, high-performance p-type 2D semiconductors is essential for advancing CMOS technology, but current materials face challenges like orbital localization and hole scattering.
• What they did: The team engineered surface reactions of monomethyl ammonia borane and ammonia borane to control atom delivery, enabling wafer-scale epitaxial growth of uniform, high-quality BCN monolayers with a 1.90 eV bandgap.
• The result: This scalable, stable p-type BCN platform enables high-performance electronic devices and fills a critical gap for integrating complementary 2D electronics in three-dimensional systems.