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A Si/SiGe T-junction enables conveyor-mode routing between two independently driven shuttle lanes with inter-lane charge transfer fidelity F = 100.0000000 − 9 × 10^−7 at 270 mm/s.
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AI summary · may contain errors
A Si/SiGe T-junction enables conveyor-mode routing between two independently driven shuttle lanes with inter-lane charge transfer fidelity F = 100.0000000 − 9 × 10^−7 at 270 mm/s.
AI summary · may contain errors
Twisted bilayer MoTe2 shows a twist-angle evolution from fractional topological states to valley-degenerate correlated insulators and superconductivity across 3.79°–5.76°.
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Switching time-reversed magnetic states of Mn5Si3 in lateral spin-valve devices reverses the detected spin signal, demonstrating time-reversal-symmetry-breaking spin injection despite vanishing net magnetization.
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Scanning tunneling microscopy in bilayer graphene/hBN under magnetic field directly visualized interaction-driven symmetry breaking Chern insulators, including fractional Hofstadter phases doubling, tripling, or quadrupling the moiré unit cell.
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Hole-doped generalized Wigner crystals in electron-doped, near-60° twisted MoSe2 bilayers melt into interaction-driven disordered states, while electron-doped GWCs melt into delocalized liquid-like states.
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