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Conveyor-mode electron shuttling through a T-junction in Si/SiGe.
Nature Communications · · Journal Article · Open access
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Abstract ↗AI summary
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A Si/SiGe T-junction enables conveyor-mode routing between two independently driven shuttle lanes with inter-lane charge transfer fidelity F = 100.0000000 − 9 × 10^−7 at 270 mm/s.
- Why it matters: Linear conveyor lanes need two-dimensional grid connectivity with controllable routing, without adding prohibitive control complexity.
- What they did: The authors built a T-junction linking two driven shuttle lanes and routed electrons without extra control lines beyond four channels per conveyor belt, then measured fidelity at 270 mm/s.
- The result: They controlled filling of 54 quantum dots with atomic pulses to swap electron patterns, supporting a native spin-qubit SWAP gate and scalable 2D architectures for error correction.
The findingWhy it mattersWhat they didThe result
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- 1 cites