Low-power 2D CFETs using single-crystal high-κ dielectrics.

Wafer-scale, transferable single-crystal anatase titanium dioxide enables van der Waals integration with 2D transition metal dichalcogenides, yielding subthreshold swing near the thermal limit and record-low hysteresis.

• Why it matters: Low-voltage scaling is constrained by electrostatics and leakage, and 2D devices suffer from imperfect channel–dielectric interfaces that worsen subthreshold swing, hysteresis, and bias-temperature instability.
• What they did: They integrated single-crystal anatase TiO2 with 2D transition metal dichalcogenides to form a pristine 2D-dielectric interface, then fabricated n- and p-type enhancement-mode field-effect transistors and complementary inverters.
• The result: The transistors show near-thermal-limit subthreshold swing, record-low hysteresis, and well-matched transfer characteristics for both polarities, enabling complementary inverters with high voltage gain, large noise margins, and subpicowatt static power consumption.

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