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Surface Charge Dependent Foliar Applied Silicon Quantum Dots Enhance Soybean Salt Tolerance Through Leaf-Root-Microbial Responses.
Plant, Cell & Environment · · Journal Article
Chen, Liu + more
Abstract ↗AI summary
The abstract is read at the publisher; the summary is JClub's.
Positively charged silicon quantum dots (P-SiQDs) on soybean leaves accumulate 35.3% more silicon than negatively charged SiQDs by improving foliar retention and penetration.
- Why it matters: Salt stress limits soybean growth and photosynthesis, and it remains unclear how foliar nano-fertilizer surface charge shapes leaf–root–microbe responses.
- What they did: Soybean plants received foliar SiQDs of different surface charges, then were assessed under 200 mM NaCl for growth, Na+/K+ ratio, thylakoid ultrastructure, photosynthesis, metabolomics, and phyllosphere/rhizosphere microbiomes.
- The result: Under salt stress, P-SiQDs increased shoot dry weight, lowered the Na+/K+ ratio, improved photosynthetic performance, raised 100-seed weight by 20.1%-25.9%, and enhanced root growth, nodulation, nitrogenase activity, and salt-tolerant microbial enrichment.
The findingWhy it mattersWhat they didThe result
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