III-nitride-based in-sensor computing enabled by interfacial polarization effects.

A III-nitride sensor-memristor exploits interfacial polarization to achieve nanowatt-per-square-centimetre light sensitivity, 10^6 A W^-1 responsivity, and 10^5 on/off ratio.

• Why it matters: Existing oxide- and 2D-ferroelectric in-sensor computing devices face response loss and fabrication challenges, limiting real-time, energy-efficient sensing at scale.
• What they did: The device uses polarization-induced carrier spatial separation and defect-free bipolar polarization interfaces, and it is operated in sensor-memristor mode with applied bias to switch into a high-speed detector.
• The result: It maintains high performance up to 300 °C, establishing a design principle for in-sensor computing based on interfacial electrostatics and asymmetric-barrier-modulated transport compatible with industrial III-nitride and CMOS integration.

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