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Zero-field spin-wave networks with integrated non-volatile memory.
Nature materials · · Journal Article · Open access
Nikolaev, Raskhodchikov + more
Abstract ↗AI summary
The abstract is read at the publisher; the summary is JClub's.
Switching the static magnetization direction in waveguiding elements within a zero-bias magnonic network enables efficient control of spin-wave propagation paths.
- Why it matters: Spin-wave nanocircuits need an integrated, feasible non-volatile memory element, which is currently missing for practical information processing and computing.
- What they did: The authors propose built-in non-volatile memory using static magnetization states in a magnonic network made from a low-loss magnetic insulator and operating at zero bias magnetic field, and they demonstrate propagation-path control via magnetization switching.
- The result: The work suggests a route to low-energy selective magnetization switching, enabling advanced, self-contained magnonic nano-circuits with integrated memory.
The findingWhy it mattersWhat they didThe result
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- Open access
- 1 cites