Integration of high-κ oxide on 2D semiconductors with carbon-dot monolayer assembly as van der Waals interfacial layer.

Atomically thin carbon-dot monolayers enable ultrathin, stable high-κ oxide integration on 2D semiconductors with EOT as low as 0.6 nm.

• Why it matters: Integrating high-quality dielectrics with 2D materials is challenging due to their atomically smooth surfaces, which hinder direct oxide growth and limit device performance.
• What they did: The team assembled nanometer-scale carbon dots into a monolayer on graphene and MoS2, forming a van der Waals interfacial layer that facilitates ultrathin high-κ oxide deposition.
• The result: This method produces hybrid dielectrics with low leakage, high breakdown fields, and enables high-performance MoS2 transistors with near-ideal subthreshold swing and low-voltage operation, advancing 2D electronics integration.