Universal crystallization kinetics of solution-processed semiconductors.

A dimensionless, universal model for heterogeneous crystallization kinetics in solution-processed semiconductors predicts morphology outcomes across perovskite and organic materials.

• Why it matters: Understanding and controlling crystallization is crucial for optimizing the performance of solution-processed semiconductors, yet current methods rely on trial-and-error due to complex nucleation and growth processes.
• What they did: A time-defined induced nucleation strategy was developed to initiate crystallization at specific stages, revealing three morphological regimes linked to concentration-dependent critical cluster radius, and enabling the creation of a universal kinetic model validated by in situ studies.
• The result: This model allows precise morphology control, tuning crystallinity and charge transport in transistors, and offers a general framework applicable to diverse semiconductor systems.