Wafer-scale low-symmetry graphene moiré superlattice for integrated quantum rectifiers.

Wafer-scale low-symmetry graphene on Ge(110) exhibits a room-temperature nonlinear Hall conductivity of approximately 11 μm/V·Ω, enabling integrated quantum rectifiers.

• Why it matters: Breaking crystalline symmetry is essential to access Berry curvature physics and anomalous transport phenomena, but current methods rely on external fields or complex stacking, limiting scalable device integration.
• What they did: The study used surface premelting engineering to create striped germanium surface patterns on Ge(110), reducing graphene symmetry from D6h to C1v, and employed first-principles calculations to analyze the electronic structure.
• The result: The resulting nonlinear Hall rectifiers can generate over 20 millivolts from radio frequency input and power devices like voltage boosters and LEDs, advancing wafer-scale nonlinear quantum device development.